PENENTUAN SENSITIVITAS DETEKTOR SINAR-X BERBASIS FOTOTRANSISTOR



Ramacos Fardela(1*)

(1) Teknik Komputer-Sekolah Tinggi Teknologi Payakumbuh
(*) Corresponding Author

Abstract


Abstract

X-ray interaction with matter can produce phenomenon of fluorescence that emits visible light. This phenomenon was exploited to design an x-ray detector based on phototransistor by attaching a screen ZnS(Ag) on the surface of the phototransistor which is arraponged in a Darlington circuit. Detection of active region of detector was done by collimating of x-rays beam from the x-ray generator tube Philips 2000 watts, 60 kV type PW 2215/20 NR 780 026 and measure the detector output voltage (Vout) at change in x-ray intensity . The experimental results showed that the Darlington circuit can be applied to design the detector of x-ray based on phototransistor. Sensitivity of detector used 0,037 mV and offset 130 mV.

Keywords: Detector , Phototransistor , X-ray , Screen ZnS ( Ag )

 

Abstrak

Interaksi sinar-x dengan materi dapat menghasilkan gejala fluoresensi yang mengemisikan cahaya tampak. Fenomena ini dimanfaatkan untuk merancang detektor sinar-x berbasis fototransitor dengan menempelkan layar pemendar ZnS(Ag) di permukaan fototransistor yang disusun dalam rangkaian Darlington. Pengukuran sensitivitas detektor dilakukan dengan langkah mengkolimasi berkas sinar-x dari tabung pembangkit sinar-x Philips 2000 watt, 60 kV tipe PW 2215/20 NR 780026 dan mengukur tegangan keluaran detektor (Vout) terhadap perubahan intensitas sinar-x. Berdasarkan hasil eksperimen menunjukkan bahwa rangkaian Darlington dapat diterapkan untuk merancang detektor sinar-x berbasis fototransistor. Sensitivitas detektor didapatkan sebesar 0,037 mV dan gelinciran 130 mV.

Kata kunci: Detektor, fototransistor, Sinar-X, Layar ZnS(Ag)


Keywords


Detektor, fototransistor, Sinar-X, Layar ZnS(Ag)

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References


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